Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnB}{\mathrm{i}}_{2}\mathrm{T}{\mathrm{e}}_{4}$

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Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $MnB i_{2} T e_{4}$

Seng Huat Lee, Yanglin Zhu, Yu Wang, Leixin Miao, Timothy Pillsbury, Hemian Yi, Susan Kempinger, Jin Hu, Colin A. Heikes, P. Quarterman, William Ratcliff, Julie A. Borchers, Heda Zhang, Xianglin Ke, David Graf, Nasim Alem, Cui-Zu Chang, Nitin Samarth, and Zhiqiang Mao

Phys. Rev. Research 1, 012011(R) – Published 19 August 2019

Abstract

$MnB i_{2} T e_{4}$ has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator—an ideal platform to create quantum anomalous Hall insulator and axion insulator states. We performed comprehensive studies on the structure, nontrivial surface state, and magnetotransport properties of this material. Our results reveal an intrinsic anomalous Hall effect arising from a noncollinear spin structure for the magnetic field parallel to the $c$ axis. We observed negative magnetoresistance under arbitrary field orientation below and above the Néel temperature $(T_{N})$ , providing clear evidence for strong spin fluctuation-driven spin scattering in both the AFM and paramagnetic states. Furthermore, we found that the nontrivial surface state opens a large gap $(\sim 85 meV)$ even far above $T_{N}$ . Our findings demonstrate that the bulk band structure of $MnB i_{2} T e_{4}$ is strongly coupled with the magnetic property and that a net Berry curvature in momentum space can be created in the canted AFM state. In addition, our results imply that the gap opening in the surface states is intrinsic, likely caused by the strong spin fluctuations in this material.

Received 11 December 2018
Revised 5 May 2019

DOI:https://doi.org/10.1103/PhysRevResearch.1.012011

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Anomalous Hall effect Antiferromagnetism Magnetotransport

Topological insulators

Angle-resolved photoemission spectroscopy Magnetization measurements Resistivity measurements Scanning transmission electron microscopy

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Seng Huat Lee ^1,2,*, Yanglin Zhu^2,3,*, Yu Wang^1,2, Leixin Miao⁴, Timothy Pillsbury², Hemian Yi², Susan Kempinger², Jin Hu⁵, Colin A. Heikes⁶, P. Quarterman⁶, William Ratcliff⁶, Julie A. Borchers⁶, Heda Zhang⁷, Xianglin Ke⁷, David Graf⁸, Nasim Alem⁴, Cui-Zu Chang^1,2, Nitin Samarth^1,2, and Zhiqiang Mao^1,2,†

¹2D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA
²Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USA
³Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA
⁴Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
⁵Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
⁶NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
⁷Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, USA
⁸National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA

^*These authors contributed equally to this work.
^†zim1@psu.edu

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Figure 1
(a) The selected area diffraction pattern taken from the [100] zone axis for $MnB i_{2} T e_{4}$ . Inset: Crystal image of $MnB i_{2} T e_{4}$ . (b) HAADF-STEM image taken from the [100] zone axis. Inset: Magnified image of a one-unit cell with the atoms overlaid on top to demonstrate the layered structure of $MnB i_{2} T e_{4}$ . The yellow arrows in (b) mark Mn vacancies. (c) and (d) The intensity profiles of Mn and Bi atomic columns indicated by the red and blue arrows in (b).
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Figure 2
ARPES band maps of $MnB i_{2} T e_{4}$ single crystal along the $K - Γ - K$ direction and the corresponding second derivative maps at (a) 5 K and (b) 300 K.
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Figure 3
(a) and (d): Field dependence of magnetic torque τ of $MnB i_{2} T e_{4}$ at 2 K for (a) $H ∥ c^{'}$ and (d) $H ⊥ c^{'}$ ( $c^{'}$ denotes a direction nearly parallel to the $c$ axis). The purple and orange data points in (a) are the neutron scattering intensities at $(\bar{1} 0 \frac{1}{2})$ and ( $\bar{1} 02$ ) as a function of magnetic field at 4.2 K. Error bars represent one sigma errors based on Poisson counting statistics. The black curves in (a) and (d) represent the isothermal magnetization measured at 2 K with $H ∥ c$ and $H ⊥ c$ . The insets illustrate the antiferromagnetic (AFM), canted antiferromagnetic (CAFM), and ferromagnetic (FM) phases in the different field ranges. (b) and (c): Field dependences of in-plane resistivity $ρ_{x x}$ and out-of-plane resistivity $ρ_{z z}$ at various temperatures for $H ∥ c$ . (e) and (f): Field dependences of $ρ_{x x}$ and $ρ_{z z}$ at various temperatures for $H ⊥ c$ . The insets in (b), (c), (e), and (f) illustrate the experiment setups.
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Figure 4
Temperature dependences of the (a) in-plane resistivity $ρ_{x x}$ and (b) out-of-plane resistivity $ρ_{z z}$ under various magnetic fields ( $H ∥ c$ ).
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Figure 5
(a) Hall resistivity $ρ_{x y}$ as a function of magnetic field at various temperatures for $MnB i_{2} T e_{4}$ . The schematic illustrates the experimental setup for $ρ_{x y}$ measurements. Inset: $ρ_{x y}$ vs $H$ in the 0–35 T field range at 1.5 and 30 K. (b) The field dependence of anomalous Hall resistivity $Δ ρ_{x y}$ under various field orientations, obtained after subtracting the normal Hall resistivity due to the Lorentz effect from $ρ_{x y}$ shown in (c). (c) Hall resistivity as a function of magnetic field under various field orientations. (d) $Δ ρ_{x y}$ plotted against the magnetization $M$ for different field orientations. The data in orange color were collected at 15 K and the rest were measured at 2 K [the magnetization data used for making this plot are shown in Fig. S3(c)].
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Physical Review Research

Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator MnBi2Te4

Seng Huat Lee, Yanglin Zhu, Yu Wang, Leixin Miao, Timothy Pillsbury, Hemian Yi, Susan Kempinger, Jin Hu, Colin A. Heikes, P. Quarterman, William Ratcliff, Julie A. Borchers, Heda Zhang, Xianglin Ke, David Graf, Nasim Alem, Cui-Zu Chang, Nitin Samarth, and Zhiqiang Mao

Phys. Rev. Research 1, 012011(R) – Published 19 August 2019

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Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $MnB i_{2} T e_{4}$